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| KSA539 transistor (pnp) features power dissipation p cm: 0.4 w (tamb=25 ) collector current i cm: -0.2 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic=- 100 a , i e =0 -60 v collector-emitter breakdown voltage v(br) ceo ic= -10 ma, i b =0 -45 v emitter-base breakdown voltage v(br) ebo i e =-10 a, i c =0 -5 v collector cut-off current i cbo v cb = -45v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -3v, i c =0 -0.1 a dc current gain h fe v ce = -1v, i c = -50ma 40 240 collector-emitter saturation voltage v ce (sat) i c =-150ma, i b =-15 ma -0.5 v base-emitter saturation voltage v be (sat) i c =-150ma, i b =-15 ma -1.2 v classification of h fe rank r o y range 40-80 70-140 120-240 1 2 3 to-92 1. emitter 2. base 3. collector KSA539 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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